1. 基本資料
  2. 獲獎與殊榮
  3. 現職與經歷
  4. ◎主要研究
  5. I、奈米矽發光元件方面
  6. II、可撓式LED與Solar Cell整合應用方面
  7. III、元件設計模擬方面
  8. ◎論文發表
  9. I、SCI論文
  10. II、EI論文
  11. III、國內期刊論文
  12. IV、專書及專書論文
  13. V、發明專利及其他協助產業技術發展之具體績效
  14. VI、近年內(2007~2011)主持執行之國科研究計畫

獲獎與殊榮

現職與經歷


    1. 現任國立臺北大學(National Taipei University)電機工程學系專任教授【2012年~】:

  • 2011年獲准計畫
      極氧化微流道與陰極電鍍微導線之整合技術及其應用於多孔矽微感測實驗室晶片之開發

    2. 曾任聖約翰科技大學(St. John's University)電子系專任教授【2004年~2012年】:

  • 每年皆通過國科會計畫,並擔任主持人 (共計曾主持16件國科會計畫)
  • 2010、2011、2012年,獲准三年期計畫
      可撓式發光顯示器模組與薄膜太陽能儲能系統整合技術研發及其創意產業應用
  • 2009、2010年獲准兩年期計畫
      [另獲准,一名博士後研究及一名碩士級研究員]
      奈米級多孔矽薄膜研製複合式光敏與氣敏微型感測陣列元件及其在色光與電性輸出響應之研究
  • 2008年獲准計畫
      以新異電蝕製程進行奈米級多孔矽薄膜於太陽能吸收/轉換元件與可見光放射元件之應用及其於能源與照明之光電轉換效率改善
  • 2008年獲准小產學計畫
      半導體薄膜高精密表面檢測之數位影像多點網路資訊共享平台應用計畫
  • 2007年獲准計畫
      矽基材新異電蝕製程之開發及其光電特性之應用研究
  • 指導多位碩士班學生,考取國立大學博士班:
      指導大學部楊柏宇專題研究獲李國鼎獎學金(全國僅5名,每名10萬元獎金)。

    3. 曾任聖約翰科技大學副校長 【2007年~2012年】:

  • 擔任2007年聖約翰科技大學「教育部評鑑」全校籌備總幹事
  • 連續七年(2006~2009)擔任聖約翰科技大學「教學卓越計畫」總執筆暨執行長
  • 擔任「教育部提升績優學校教學設施獎助計畫」主持人:
       經費共計783萬5201元
  • 98~100年榮獲教育部特色典範計畫,擔任全校總主持人(及計畫總執筆)
       三年共獲24,190,000元

    4. 曾任聖約翰科技大學教務長【2004年~2007年】:

  • 2004年2月起,由文化大學轉任聖約翰技術學院擔任
    2005年獲教育部肯定,行政類與學術類全數一等,2006年順利升格大學。

    5.  曾任經濟部智慧財產局兼任專利審查委員【2002年~2005】:

  • 已具備經濟部智慧財產局核發專利代理人資格。

    6.  其他教學經歷

  • 曾任文化大學材料科學與奈米科技研究所兼任副教授/正教授【2004~2012年】
  • 曾任文化大學電機系專任副教授【2001~2003年】
  • 曾任淡江大學電機研究所兼任副教授【2001~2003年】
  • 曾任新埔技術學院(現已改名為聖約翰)電子工程系電子系主任【1999~2001年】
  • 曾任新埔專校/技術學院(現改名聖約翰)電子工程系專任副教授【1997~2001年】

主要研究(近年)


    類別
    期刊論文
    研討會論文
    國外
    專書專章
    總計
    SCI+EI論文
    國內學報
    刊物論文
    獲獎之
    研討會論文
    其他
    研討會論文
    篇數
    17+2
    10
    1
    47
    2
    79
    作者
    排序
    11+2篇為第一作者
    1篇為第二作者
    5篇為第五作者
    10篇皆為
    第一作者
    為第1作者
    35篇為第一作者
    2篇為第二作者
    2篇為第三作者
    8篇非前三作者
    皆為第1作者
    61篇為第一作者
    3篇為第二作者
    2篇為第三作者
    13篇非前三作者
    Impact
    Factors
    總計
    34.297
    (@2010)
    (無)
    (無)
    (無)
    (無)
    34.297
    (@2010)


I、奈米矽發光元件方面



II、可撓式LED與Solar Cell整合應用方面



III、元件設計模擬方面



論文發表


I、SCI論文

 
【符號“*”表示為通訊作者,Rank factor為該領域期刊排名÷該領域全部期刊數】
 
  1. P. Y. Yang, J. L. Wang, W. C. Tsai, S. J. Wang, J. C. Lin, I. C. Lee, C. T. Chang, and H. C. Cheng, “Effect of Oxygen Annealing on the Ultraviolet Photoresponse of p-NiO-Nanoflower/n-ZnO-Nanowire Heterostructures,” Journal of Nanoscience and Nanotechnology, Vol. 11, No. 7, pp. 5737-5743, July 2011. 【SCI, Impact factor = 1.351 @2010】【Rank factor: MATERIALS SCIENCE, MULTIDISCIPLINARY =94/222】
  2. P. Y. Yang, J. L. Wang, W. C. Tsai, S. J. Wang, J. C. Lin, I. C. Lee, C. T. Chang, and H. C. Cheng “High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires,” Japanese Journal of Applied Physics, Vol.50, pp.04DN07-1~04DN07-5, 2011. 【SCI, Impact factor = 1.018 @2010】【Rank factor: PHYSICS, APPLIED =75/116】
  3. P. Y, Yang, J. L. Wang, W. C. Tsai, S. J. Wang, J. C. Lin, I. C. Lee, C. T. Chang, and H. C. Cheng, “Field-emission Characteristics of Al-doped ZnO Nanostructures Hydrothermally Synthesized at Low Temperature,” Journal of Nanoscience and Nanotechnology, Vol.11, No.7, pp.6013-6019, 2011. 【SCI, Impact factor = 1.351 @2010】【Rank factor: MATERIALS SCIENCE, MULTIDISCIPLINARY =94/222】
  4. P. Y. Yang, J. L. Wang, W. C. Tsai, S. J. Wang, J. C. Lin, I. C. Lee, C. T. Chang, and H. C. Cheng, “Photoresponse of Hydrothermally Grown Lateral ZnO Nanowires,” Thin Solid Films, vol. 518, Issue 24, pp. 7328-7332, 2010. 【SCI, Impact factor = 1.909 @2010】【Rank factor: MATERIALS SCIENCE, COATINGS & FILMS =3/18】
  5. W. C. Tsai, J. C. Lin*, K. M. Huang, P. Y. Yang, and S. J. Wang, “White Light Emissions from P-type Porous Silicon Layers by High-Temperature Thermal Annealing,” Europephysics Letter, Vol. 85, No. 2, pp. 27002-27007 , 2009. 【SCI, Impact factor = 2.753 @2010】【Rank factor: PHYSICS, MULTIDISCIPLINARY =16/80】
  6. J. C. Lin*, W. C. Tsai, and P. W. Lee, “The Enhancement of Photoluminescence of N-Type Porous Silicon by Hall-Effect Assistance During Electrochemical Anodization,” Electrochemistry Communications, Vol. 9, pp. 449–453, 2007. 【SCI, Impact factor = 4.282 @2010】【Rank factor: ELECTROCHEMISTRY =3/26】
  7. J. C. Lin*, W. C. Tsai, and W. L. Chen, “Light-Emission and Negative-Differential- Conductance of N-Type Nanoporous Silicon with Buried P-Layer Assistance,” Applied Physics Letters, Vol. 90, pp. 1-4, 2007. 【SCI, Impact factor = 3.820 @2010】【Rank factor: PHYSICS, APPLIED=14/116】
  8. J. C. Lin*, H. T. Hou, and W. C. Tsai, “A Mask-Free Method of Patterned Porous Silicon Formation by a Localized Electrical Field,” Microelectronic Engineering, Vol. 84, pp. 336-339, 2007. 【SCI, Impact factor = 1.569@2010】【Rank factor: ENGINEERING, ELECTRICAL & ELECTRONIC=66/247】
  9. J. C. Lin*, Y. C. Chen, W. C. Tsai, and P. Y. Yang, “Structure Design Criteria of Dual-Channel High Mobility Electron Transistors,” Solid-State Electronics, Vol. 51, pp. 42-46, 2007. 【SCI, Impact factor = 1.438@2010】【Rank factor: ENGINEERING, ELECTRICAL & ELECTRONIC =79/247】
  10. J. C. Lin*, P. Y. Yang, and W. C. Tsai, “Simulation and Analysis of Metamorphic High Electron Mobility Transistors,” Microelectronics Journal, Vol. 38, pp. 251-254, 2007. 【SCI, Impact factor = 0.787 @2010】【Rank factor: ENGINEERING, ELECTRICAL & ELECTRONIC =152/247】
  11. J. C. Lin*, Y. C. Chen, and W. C. Tsai, “The Study of Delta-Doped InGaP/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor” Microelectronics Journal, Vol. 38, pp. 310-315, 2007. 【SCI, Impact factor = 0.787@2010】【Rank factor: ENGINEERING, ELECTRICAL & ELECTRONIC =152/247】
  12. J. C. Lin*, W. C. Tsai, and W. L. Chen, “Disperse Pipe Trench on Silicon by Electrochemical Etching with Pulsed Voltage or Pulsed Illumination,” Electronics Letters, Vol. 43, No. 4, pp. 247-248, Feb. 2007. 【SCI, Impact factor = 1.001 @2010】【Rank factor: ENGINEERING, ELECTRICAL & ELECTRONIC=122/247】
  13. M. J. Jeng, Y. H. Chang, L. B. Chang*, M. J. Huang, and J. C. Lin, “Effective Suppression of Surface Recombination of AlGaInP Light-Emitting Diodes by Sulfur Passivation,” Japanese Journal of Applied Physics, Vol. 46, No. 13, 2007, pp. L291–L293, 2007. 【SCI, Impact factor = 1.018 @2010】【Rank factor: PHYSICS, APPLIED=75/116】
  14. J. C. Lin*, P. W. Lee, and W. C. Tsai, “Manufacturing Method for N-type Porous Silicon Based on Hall Effect without Illumination,” Applied Physics Letters, Vol. 89, No. 12, pp. 121119-121121, 2006. 【SCI, Impact factor = 3.820@2010】【Rank factor: PHYSICS, APPLIED=14/116】
  15. J. C. Lin*, W. L. Chen, and W. C. Tsai, “Photoluminescence from N-type Porous Silicon Layer Enhanced by a Forward-Biased NP-Junction,” Optics Express, Vol. 14, No. 21, pp. 9764-9769, 2006. 【SCI, Impact factor = 3.749 @2010】【Rank factor: OPTICS=5/78】
  16. J. C. Lin*, W. C. Tsai and W. S. Lee, “The Improved Electrical Contact Between a Metal and Porous Silicon by Deposition Using a Supercritical Fluid,” Nanotechnology, Vol. 17, pp. 2968-2971, 2006. 【SCI, Impact factor = 3.644 @2010】【Rank factor: MATERIALS SCIENCE, MULTIDISCIPLINARY =30/222】
  17. S. J. Wang, J. C. Lin, W. R. Liou, M. Yeh, Y. C. Luo and C. Y. Cheng, "Influences of Interface Roughness Scattering on Asymmetric and/or Steplike Current-Voltage Characteristics of Resonant Tunneling Diodes,” Japanese Journal of Applied Physics, Vol. 35, part 1, no. 7, pp. 101-105, 1996. 【SCI, Impact factor = 1.018 @2010】【Rank factor: PHYSICS, APPLIED=75/116】
  18. S. J. Wang, J. C. Lin, W. R. Liou, Y. C. Luo and C. Y. Cheng, "Observation of Negative Differential Resistance Phenomenon in a Two-Step Barrier Diode,” Applied Physics Letters, Vol. 68, No. 23, pp. 3320-3322, 1996. 【SCI, Impact factor = 3.820@2010】【Rank factor: PHYSICS, APPLIED=14/116】
  19. W. R. Liou, J. C. Lin and M. Yeh, "Simulation and Analysis of a High-Frequency Resonant Tunneling Diode Oscillator,” Solid-State Electronics, Vol. 39, No. 6, pp. 833-839, 1996. 【SCI, Impact factor = 1.438 @2010】【Rank factor: ENGINEERING, ELECTRICAL & ELECTRONIC =79/247】
  20. J. C. Lin, S. J. Wang, W. R. Liou, Y. C. Luo and C. Y. Cheng, "Numerical Simulation and Experimental Realization of delta-Doped Single Barrier Resonant Tunneling Diodes,” Japanese Journal of Applied Physics, Vol. 35, Part 1, No. 2A, pp. 568-573, 1996. 【SCI, Impact factor = 1.018 @2010】【Rank factor: PHYSICS, APPLIED=75/116】
  21. Y. C. Luo, S. J. Wang, Y. G. Chiou, J. C. Lin and C. Y. Cheng, "Two-Dimensional Numerical Simulation of Si Schottky/Two-Dimensional Electron Gas Barrier Diode Using Boundary Element Method,” Japanese Journal of Applied Physics, Vol. 34, Part 1, No. 10, pp. 5556-5561, 1995. 【SCI, Impact factor = 1.138@2010】【Rank factor: PHYSICS, APPLIED=75/116】

II、EI論文

  1. J. C. Lin*, M. K. Hsu, H. T. Hou and J. C. Pan, “Combined Manufacturing Process of Electrochemical-Etching and Electroplating on Nanoporous Silicon for Its Metallization,” Advanced Material Research (EI), Vols. 194-196, pp 393-396, 2011.
  2. J. C. Lin*, J. Y. Yeh, and W. C. Tsai, “Novel BCD Circuits Design Using And-Or-Inverter Gate and Its Quantum-Dot Cellular Automata Implementation,” Proceedings of the 9th Joint Conference on Information Sciences, (All articles of these proceedings are indexed by EI/Compendex), 2006 International Conference on Photonics, Networking and Computing (JCIS-PNC 2006), 2006. 【ISBN-10: 90-78677-01-5; ISBN-13: 978-90-78677-01-7,此會議論文亦收錄於EI】

III、國內期刊論文

  1. J. C. Lin*, and C. K.Chen, “The Design of Bias Circuit on Eelectrochemical Anodization,” Hwa-Kang Journal of Engineering, Vol. 27, pp. 83-87, 2011.
  2. J. C. Lin* and J. C. Pan, “Electrochemical Etching on Porous Silicon with Glucose,” Hwa-Kang Journal of Engineering, Vol. 25, pp. 93-98, 2010.
  3. J. C. Lin* and W. J. Tsai, “Material Analysis Porous Silicon Film Depth,” Hwa-Kang Journal of Engineering, Vol. 25, pp. 123-128, 2010.
  4. J. C. Lin* and Y. H. Chen, “The Analysis of Polishing and Anodization Etching on the Porous Silicon Thin Films by Scanning Electron Microscope and Atomic Force Microscope,” Hwa-Kang Journal of Engineering, Vol. 23, pp. 41-48, 2009.
  5. J. C. Lin*, J. Y. Chen, and Y. Y. Chen, “The Microstructure and Reflectance of Porous Silicon under Different anodization Time,” Hwa-Kang Journal of Engineering, Vol. 23, pp. 119-126, 2009.
  6. J. C. Lin*, T. C. Chiu, Y. H. Chen and K. M. Huang, “Fabrications of Porous Silicon Tips by Solenodial-Type Electrodes,” Hwa-Kang Journal of Engineering, Vol. 22, pp. 7-12, 2008.
  7. J. C. Lin* and K. M. Huang, “Microstructure Analysis and Photoelectronic Properties of Porous Silicon,” Hua Kang Journal of Engineering, Vol.21, pp.137-144, 2007.
  8. J. C. Lin*, Y. C. Chen, J. C. Chang, and C. W. Chen, “Simulation of δ-Doped In0.49Ga0.51P/In0.15Ga0.85As/GaAs Depletion-Mode and Enhancement-Mode Pseudomorphic HEMT,” Journal of St. John’s University, Vol. 23, pp. 97-103, 2006.
  9. J. C. Lin*, S. L. Sun, and Y. C. Chen “Simulation of Devices and Materials on the Complementary Metal Oxide Semiconductor Transistors,” Journal of St. John’s University, Vol. 22, pp. 175-185, 2005.
  10. J. C. Lin* and P. Y. Yang, “The Simulation of Pseusomorphic In(0.49)Ga(0.51)P/ InGaAs/GaAs HEMTs,” Hwa-Kang Journal of Engineering, Vol. 18, pp. 147-160, 2004.
  11. J. C. Lin* and P. Y. Yang, “The Simulation of Pseusomorphic Al(0.2)Ga(0.8)As/ InGaAs/GaAs HEMTs,” Journal of St. John’s University, Vol. 21, pp. 145-157, 2004.
  12. F. S. Chu, Y. J. Chang, and J. C. Lin, “Design of UART with RTL Based BIST,” Hwa-Kang Journal of Engineering, Vol. 17, pp. 147-160, June 2003.
  13. C. C. Tseng, F. S. Chu and J. C. Lin, “Modeling, Simulation and Device Fabrication of Schottky Diodes,” Hwa-Kang Journal of Engineering, Vol. 16, p.p. 175-189, June 2002.
  14. J. C. Lin*, “Porous Silicon Superlattice Resonant Tunneling Diode,” St. John’s and St. Mary’s Journal, Vol. 17, pp. 249-270, October 1999.

IV、專書及專書論文

  1. J. C. Lin* and W. C. Tsai, “Novel Manufacturing and Processing Technologies of Nanoporous Silicon,” in Nanotechnology Research Developments edited by R. Jimenez-Contreras, Nova Science Publishers, Inc. (2007). [ISBN 978-1-60021-899-6]
  2. J. C. Lin* and W. C. Tsai, “Light Emissions from Nanoporous Silicon Surfaces by a Novel Chemical Anodization Processes,” in Chemical Reactions on Surfaces edited by James I. Duncan and Artur B. Klein, Nova Science Publishers, Inc. (2008). [ISBN 978-1-60456-898-1]
  3. J. C. Lin, "Physics, Simulation and Fabrication of Novel Resonant Tunneling Diodes,” Doctoral Dissertation, 1996.
  4. J. C. Lin, "The Study of Two-Dimensional Carrier Gas in Semiconductor Hetero-structures and Its Applications on High Speed Devices,” Master Thesis, 1992.

V、發明專利及其他協助產業技術發展之具體績效

  1. ''多孔矽超晶格結構負微分電阻二極體之製作方法'',中華民國發明專利

VI、近年內(2007~2011)主持執行之國科研究計畫

  1. 2011/8/1~2012/7/31 (一年期) 國科會主持人
    陽極氧化微流道與陰極電鍍微導線之整合技術及其應用於多孔矽微感測實驗室晶片之開發
  2. 2010/8/1~2013/7/31 (三年期)  國科會主持人
    可撓式發光顯示器模組與薄膜太陽能儲能系統整合技術研發及其創意產業應用
  3. 2009/8/1~2011/7/31 (二年期)  國科會 主持人
    以奈米級多孔矽薄膜研製複合式光敏與氣敏微型感測陣列元件及其在色光與電性輸出響應之研究
  4. 2009/11/1~2010/10/31(一年期)國科會小產學主持人
    半導體薄膜高精密表面檢測之數位影像多點網路資訊共享平台應用計畫
  5. 2008/8/1~2009/9/30 (一年期)  國科會主持人
    以新異電蝕製程進行奈米級多孔矽薄膜於太陽能吸收/轉換元件與可見光放射元件之應用及其於能源與照明之光電轉換效率改善
  6. 2007/8/1~2008/10/31(一年期) 國科會主持人
    矽基材新異電蝕製程之開發及其光電特性之應用研究